PhD College Scholarships in Selective Epitaxy for Nano-scaled MOSFETs at the School of Information and Communication Technology (ICT) at KTH, the Royal Institute of Technology, Sweden 2012
Study Subject(s): Selective Epitaxy for Nano-scaled MOSFETs
College Scholarships Level: PhD
Scholarship Provider: KTH
Scholarship can be taken at: Sweden
Eligibility:
Applicant must hold or be about to receive a Master of Science in Electrical Engineering, Engineering Physics or equivalent. Applicant should be strongly motivated to carry out research within the area of Si based nanodevices. The position will require independent work and the applicant is anticipated to contribute to the Integrated Devices and Circuits group and to the international research field of Si nanowire sensors. Good command of English is required to publish results and present them at international conferences. The evaluation will be based on how well the applicant fulfils the above qualifications.
College Scholarships Grants for International Students: No
Scholarship Description: At the Integrated Devices and Circuits group we conduct research on advance MOSFET devices exploring new channel materials (e.g. Ge), new gate dielectrics (e.g. LaLuO3) and new designs of MOSFETs (e.g. FinFETs). A major challenge is to realize adequately low source and drain resistances in these highly scaled MOSFETs. In the project selective epitaxy of in-situ doped Si, Si1-xGex or Ge will be integrated in a CMOS process with the aim of achieving low source/drain resistances. The PhD position deals with material growth, device fabrication and electrical characterisation. The research is supported by an existing research project dealing with advanced CMOS technology.
Further College Scholarships for PhD in Sweden 2012 Information and Application letter detail click here
Monday, December 12, 2011
College Scholarships for PhD in Sweden 2012
